Image sensor device

ABSTRACT

An image sensor device includes a substrate, a deep-trench isolation structure, an oxide layer, a light blocking structure, and an adhesion layer. The substrate has a photosensitive region. The deep-trench isolation structure is in the substrate and adjacent the photosensitive region. The oxide layer is over the photosensitive region and the deep-trench isolation structure. The light blocking structure is over the oxide layer. A bottom portion of the light blocking structure is embedded in the oxide layer. The adhesion layer is between the light blocking structure and the oxide layer. The adhesion layer extends beyond a sidewall of a top portion of the light blocking structure.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional application of the U.S. applicationSer. No. 16/900,683, filed Jun. 12, 2020, which is hereby incorporatedby reference in its entirety.

BACKGROUND

Image sensors generate electrical signals in response to the stimulationof photons. The magnitudes of the electrical signals (such as thephoto-current) depend on the intensity of the incident light received bythe respective image sensors. The image sensors may suffer fromnon-optically generated signals, which include the leakage signals,thermally generated signals, dark currents, and the like. Accordingly,the electrical signals generated by the image sensors are thencalibrated, so that the undesirable signals are cancelled out from theoutput signals of the image sensors. To cancel the non-opticallygenerated signals, black reference image sensors are formed, and areused to generate non-optically generated signals.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-9C illustrate a method for fabricating an image sensor device atvarious intermediate stages of manufacture according to some embodimentsof the present disclosure.

FIG. 10A is a cross-sectional view of an image sensor device inaccordance with some embodiments of the present disclosure.

FIG. 10B is an enlarged view of area P′ in FIG. 10A.

FIG. 11A is a cross-sectional view of an image sensor device 100″ inaccordance with some embodiments of the present disclosure.

FIG. 11B is an enlarged view of area P″ in FIG. 11A.

FIG. 12 is a flow chart of a method for forming an image sensor devicein accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, “around,” “about,” “approximately,” or “substantially”shall generally mean within 20 percent, or within 10 percent, or within5 percent of a given value or range. Numerical quantities given hereinare approximate, meaning that the term “around,” “about,”“approximately,” or “substantially” can be inferred if not expresslystated.

An improved light blocking structure in a Backside Illumination (BSI)image sensor chip and the methods of forming the same are provided inaccordance with various exemplary embodiments. The BSI image-sensordevice includes a charge-coupled device (CCD), a complementary metaloxide semiconductor (CMOS) image sensor (CIS), an active-pixel sensor(APS) or a passive-pixel sensor. The image sensing device may includeadditional circuitry and input/outputs that are provided adjacent to thegrid of pixels for providing an operation environment of the pixels andfor supporting external communication with the pixels. The intermediatestages of forming the metal shield structure are illustrated. Thevariations of the embodiments are discussed. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements.

FIGS. 1-9C illustrate a method for fabricating an image sensor device100 at various intermediate stages of manufacture according to someembodiments of the present disclosure. For simplicity, some componentsof the image sensor device 100 are omitted. The illustration is merelyexemplary and is not intended to be limiting beyond what is specificallyrecited in the claims that follow. It is understood that additionaloperations may be provided before, during, and after the operationsshown by FIGS. 1-9C, and some of the operations described below can bereplaced or eliminated for additional embodiments of the method. Theorder of the operations/processes may be interchangeable.

Photosensitive pixels 120 are formed in a substrate 110. The substrate110 may include, for example, bulk silicon, doped or undoped, or anactive layer of a semiconductor-on-insulator (SOI) substrate. In someembodiments, an SOI substrate includes a layer of a semiconductormaterial, such as silicon, formed on an insulator layer. The insulatorlayer may be, for example, a buried oxide (BOX) layer or a silicon oxidelayer. The insulator layer is provided on a substrate, such as a siliconor glass substrate. Alternatively, the substrate 110 may include anotherelementary semiconductor, such as germanium; a compound semiconductorincluding silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP,and/or GaInAsP; or combinations thereof. Other substrates, such asmulti-layered or gradient substrates, may also be used.

The photosensitive pixels 120 are formed at the front surface 110A ofthe substrate 110. The photosensitive pixels 120 may include respectivephotosensitive regions 121, which may be formed, for example, byimplanting suitable impurity ions into the substrate 110 from the frontsurface 110A of the substrate 110. In some embodiments, impurity ionsmay be implanted in an epitaxial layer (not illustrated) within thesubstrate 110. The photosensitive regions 121 of the photosensitivepixels 120 are configured to covert light signals (e.g., photons) toelectrical signals, and may be PN junction photo-diodes, PNPphoto-transistors, NPN photo-transistors, or the like. For example, thephotosensitive regions 121 may include an n-type implantation regionformed within a p-type semiconductor layer (e.g., at least a portion ofthe substrate 110). In such embodiments, the p-type semiconductor layermay isolate and reduce electrical cross-talk between adjacentphoto-active regions of the photosensitive pixels 120. In someembodiments, the photosensitive regions 121 may include a p-typeimplantation region formed within an n-type semiconductor layer (e.g.,at least a portion of the substrate 110).

In some embodiments, the photosensitive pixels 120 form a photosensitivepixel array, such as a two-dimensional rectangular array as viewed fromtop (see FIG. 9B). In some embodiments, each photosensitive pixel 120may further include a transfer gate transistor (not illustrated) and afloating diffusion capacitor (not illustrated). In each photosensitivepixel 120, a first source/drain region of the corresponding transfergate transistor is electrically coupled to a respective photosensitiveregion 121, and a second source/drain region of the correspondingtransfer gate transistor is electrically coupled to a respectivefloating diffusion capacitor.

Prior to the formation of the photosensitive regions 121, isolationfeatures 130 may be formed at the front surface 110A of the substrate110. In some embodiments, the isolation features 130 may include shallowtrench isolation (STI) structures. In some embodiments, the STIstructures may be formed by patterning the front surface 110A of thesubstrate 110 to form trenches in the substrate 110 and filling thetrenches with suitable dielectric materials to form the STI structures.The dielectric materials may include silicon oxides. In someembodiments, the substrate 110 is patterned using suitablephotolithography and etching process. In some other embodiments, theisolation features 130 may include various doped regions formed usingsuitable implantation processes.

Prior to the formation of the isolation features 130, in someembodiments, doped isolation regions 135 are formed in the substrate 110to isolate the photosensitive regions 121 of the photosensitive pixels120 from each other. The doped isolation regions 135 have a dopingpolarity opposite to that of the photosensitive regions 121 to reducethe dark current and white pixel defects. The doped isolation regions135 are formed adjacent to or near the front surface 110A of thesubstrate 110. Each pair of neighboring photosensitive regions 121 isseparated from one another by one of the respective doped isolationregions 135. The doped isolation regions 135 are doped with a dopingpolarity the same as that of the substrate 110. In some embodiments, thedoping concentration of the doped isolation regions 135 is higher thanthat of the substrate 110. The doped isolation regions 135 are formed byone or more implantation processes or diffusion processes.

An interconnect structure 150 may be formed on the front surface 110A ofthe substrate 110, thereby forming electrical circuits with thephotosensitive pixels 120. The interconnect structure 150 may include anILD layer 152 and/or IMD layers 154 containing conductive features(e.g., conductive lines and vias including copper, aluminum, tungsten,combinations thereof, and the like) formed using any suitable method,such as damascene, dual damascene, or the like. The ILD 152 and IMDs 154may include low-k dielectric materials having k values, for example,lower than about 4.0 or even 2.0 disposed between such conductivefeatures. In some embodiments, the ILD 152 and IMDs 154 may be made of,for example, phosphosilicate glass (PSG), borophosphosilicate glass(BPSG), fluorosilicate glass (FSG), SiOxCy, Spin-On-Glass,Spin-On-Polymers, silicon carbon material, compounds thereof, compositesthereof, combinations thereof, or the like, formed by any suitablemethod, such as spinning, chemical vapor deposition (CVD),plasma-enhanced CVD (PECVD), or the like.

In some embodiments, prior to the formation of the interconnectstructure 150, one or more active and/or passive devices may be formedon the front surface 110A of the substrate 110 in addition to thephotosensitive pixels 120 including the photosensitive regions 121, thetransfer gate transistors, and the floating diffusion capacitors (notillustrated). The one or more active and/or passive devices may includevarious N-type metal-oxide semiconductor (NMOS) and/or P-typemetal-oxide semiconductor (PMOS) devices, such as transistors,capacitors, resistors, diodes, photo-diodes, fuses, and the like. One ofordinary skill in the art will appreciate that the above examples areprovided for illustrative purposes only and are not meant to limit thepresent disclosure in any manner. Other circuitry may be used asappropriate for a given application.

Reference is made to FIG. 2 . The structure of FIG. 1 is flipped andoptionally bonded to a carrier substrate 200 such that the front surface110A of the substrate 110 faces the carrier substrate 200 and a backsurface 110B of the substrate 110 is exposed for further processing.Various bonding techniques may be employed to achieve bonding betweenthe structure of FIG. 1 and the carrier substrate 200. In someembodiments, the bonding techniques may include for example, a directbonding process such as metal-to-metal bonding (e.g., copper-to-copperbonding), dielectric-to-dielectric bonding (e.g., oxide-to-oxidebonding), metal-to-dielectric bonding (e.g., oxide-to-copper bonding),hybrid bonding, adhesive bonding, anodic bonding, any combinationsthereof and/or the like. In some embodiments, the carrier substrate 200may provide mechanical support for processing operations performed onthe back surface 110B of the substrate 110. In some embodiments, thecarrier substrate 200 may be formed of silicon or glass and may be freefrom electrical circuitry formed thereon. In such embodiments, thecarrier substrate 200 provides temporary support and is de-bonded fromthe image sensor device 100 (see FIG. 9A) after finishing the processoperations performed on the back surface 110B of the substrate 110. Insome other embodiments, the carrier substrate 200 may include asemiconductor substrate (not illustrated), one or more active devices(not illustrated) on the semiconductor substrate, and an interconnectstructure (not illustrated) over the one or more active devices. In suchembodiments, in addition to providing the mechanical support, thecarrier substrate 200 may provide additional electrical functionality tothe image sensor device depending on design requirements.

After the structure of FIG. 1 is flipped and bonded to the carriersubstrate 200, a thinning process may be performed on the back surface110B of the substrate 110 to thin the substrate 110. In someembodiments, the thinning process serves to allow more light to passthrough from the back surface 110B of substrate 110 to thephotosensitive regions 121 of the photosensitive pixels 120 withoutbeing absorbed by the substrate 110. In some embodiments in which thephotosensitive regions 121 are fabricated in an epitaxial layer, theback surface 110B of the substrate 110 may be thinned until theepitaxial layer is exposed. The thinning process may be implemented byusing suitable techniques such as grinding, polishing, a SMARTCUT®procedure, an ELTRAN® procedure, and/or chemical etching.

Reference is made to FIG. 3 . The back surface 110B of the substrate 110is patterned to form plural trenches 112 in the substrate 110. In someembodiments, the trenches 112 are formed in the doped isolation regions135. In some embodiments, the back surface 110B of the substrate 110 ispatterned using a suitable anisotropic wet etching process, while usinga patterned mask (e.g., photoresist or a non-photosensitive material,such as silicon nitride) as an etch mask. In some embodiments in whichthe substrate 110 is formed of silicon, the anisotropic wet etch may beperformed using potassium hydroxide (KOH), ethylenediamine pyrocatechol(EDP), tetramethylammonium hydroxide (TMAH), or similar. The patternedmask may be removed after the etching process. In some embodiments inwhich the patterned mask is formed of a photoresist, the patterned maskmay be removed using an ashing processes followed by a wet cleanprocess. In other embodiments in which the patterned mask is formed of anon-photosensitive material, the patterned mask may be removed using asuitable etching process.

Reference is made to FIG. 4 . After forming the trenches 112, adielectric layer 160 is formed on the back surface 110B of the substrate110, thereby filling the trenches 112. The dielectric layer 160 mayinclude a charge accumulation layer 162 conformally formed on the backsurface 110B of the substrate 110 and a buffer layer 164 over the chargeaccumulation layer 162. In some embodiments, after the buffer layer 164is deposited above the charge accumulation layer 162, a planarizationprocess (e.g., a CMP process) is performed to planarize the top surfaceof the buffer layer 164 as shown in FIG. 4 .

In some embodiments, the charge accumulation layer 162 may include oneor plural high-k dielectric materials. For example, the chargeaccumulation layer 162 may include an HfO₂ layer and a Ta₂O₅ layer overthe HfO₂ layer. The charge accumulation layer 162 helps to accumulatenegative or positive charges in the substrate 110 to an interfacebetween the charge accumulation layer 162 and the substrate 110 to formelectric dipoles, which functions as a carrier barrier to trap defectssuch as dangling bonds. The configuration of the charge accumulationlayer 162 may reduce leakage current of the image sensor devices.

In some embodiments, the buffer layer 164 may be formed of siliconoxide, although other suitable dielectric materials may be used. In someembodiments, the buffer layer 164 may be formed using ALD, CVD, PECVD,the like, or combinations thereof. In some embodiments, the chargeaccumulation layer 162 and the buffer layer 164 is planarized using agrinding process, a chemical mechanical polishing (CMP) process, anetching process, or the like. Through the configuration, portions of thecharge accumulation layer 162 and the buffer layer 164 in the trenches112 of the substrate 110 form the deep-trench isolation structures 1601between neighboring photosensitive pixels 120 and in the doped isolationregions 135. The deep-trench isolation structures 1601 may preventelectrical cross-talk between the photosensitive pixels 120. Thedeep-trench isolation structures 1601 may be referred to as backsidedeep trench isolation (BDTI) structures. In some other embodiments, thecharge accumulation layer 162 may be omitted.

Reference is made to FIG. 5 . The buffer layer 164 is patterned to formone or more trenches 165 therein and above the deep-trench isolationstructures 1601. In some embodiments, the trenches 165 are formeddirectly above the deep-trench isolation structures 1601. In someembodiments, the buffer layer 164 may be patterned using suitablephotolithography and etching processes. For example, a photoresist iscoated over the buffer layer 164 (see FIG. 4 ) and then is patternedusing photolithography techniques to expose portions of the buffer layer164 above the deep-trench isolation structures 1601. Subsequently, anetching process is performed to recess the exposed portions of thebuffer layer 164. In some embodiments, the trench 165 has a grid shapefrom a top view as illustrated in FIG. 9B. In some embodiments, theetching process is a dry etching process, a wet etching process, orcombinations thereof. In some embodiments, since the trenches 165 areformed directly above the deep-trench isolation structures 1601, themask for forming the trenches 165 may be the same as the mask forforming the trench 112 (see FIG. 3 ).

Reference is made to FIG. 6 . A light blocking layer 170 is formed overthe dielectric layer 160. The light blocking layer 170 may be a metallayer. In some embodiments, the light blocking layer 170 is made of areflective metal material or a light absorption material. For example,the light blocking layer 170 may include Cu, Au, Ag, Al, Ni, W, alloysthereof, or the like and may be formed using PVD, plating, or the like.In some embodiments, prior to the formation of the light blocking layer170, a barrier/adhesion layer 175 may be conformally formed over thedielectric layer 160. The barrier/adhesion layer 175 may includetitanium, titanium nitride, tantalum, tantalum nitride, or multilayersthereof and may be formed using PVD, CVD, MOCVD, plasma enhanced CVD(PECVD), atomic layer deposition (ALD), electroplating and/or the like.

In some embodiments, the light blocking layer 170 may fill the one ormore trenches 165. In some embodiments where the trenches 165 has a gridshape from a top view as illustrated in FIG. 9B, the portions of thelight blocking layer 170 in the trenches 165 also has a grid shape fromthe top view as illustrated in FIG. 9B. The portions of the lightblocking layer 170 in the trenches 165 can further block lights betweenphotosensitive pixels 120, thereby preventing cross-talk which may occurwhen light from one pixel region makes its way into an adjacent pixelregion through the dielectric layer 160.

Reference is made to FIG. 7 . The light blocking layer 170 (see FIG. 6 )is patterned into a light blocking structure 172. The patterning processmay include suitable photolithography and etching processes. Forexample, a patterned mask (e.g., photoresist) is formed over the lightblocking layer 170 (see FIG. 6 ) and exposing portions of the lightblocking layer 170. Subsequently, an etching process is performed toremove the exposed portions of the light blocking layer 170, therebyforming openings 171 in the light blocking layer 170. The etchingprocess may include wet etch, dry etch, or the combination thereof. Forexample, the etching process may include a dry etch using suitable gasetchants. The etching process may be performed until thebarrier/adhesion layer 175 (or the dielectric layer 160 when thebarrier/adhesion layer 175 is omitted) is exposed. Through thepatterning process, the barrier/adhesion layer 175 (or the dielectriclayer 160) is exposed through the openings 171 in the light blockinglayer 170. In some embodiments, the openings 171 are aligned withrespective photosensitive pixels 120.

A remaining portion of the light blocking layer 170 in the pixel arrayregion 102 is referred to as the light blocking structure (or lightblocking grid) 172. The light blocking structure 172 has the openings171 aligned with respective photosensitive pixels 120. For example, insome embodiments, walls of the light blocking structure 172 may encircleeach active photosensitive pixel 120 as viewed from top (see FIG. 9B).Through the configuration, the light blocking structure 172 preventsoptical cross-talk between neighboring photosensitive pixels 120.

Reference is made to FIG. 8 . A dielectric layer 180 is formed over thelight blocking structure 172 and fills the openings 171. In someembodiments, the dielectric layer 180 may be formed using similarmaterials and methods as the buffer layer 164 described above withreference to FIG. 4 and the description is not repeated herein. In someembodiments, the dielectric layer 180 and the buffer layer 164 may beformed of a same material. In some other embodiments, the dielectriclayer 180 and the buffer layer 164 may be formed of different materials.Subsequently, the dielectric layer 180 is planarized using a grindingprocess, a chemical mechanical polishing (CMP) process, an etchingprocess, or the like.

Reference is made to FIGS. 9A and 9B, wherein FIG. 9B is a top view ofthe image sensor device 100 according to some embodiment, and FIG. 9A isa cross-sectional view taken along line A-A in FIG. 9B. Subsequently, acolor filter layer 190 is formed over the dielectric layer 180. In someembodiments, the color filter layer 190 includes plural color filters192, aligned with respective photosensitive pixels 120. The colorfilters 192 may be used to allow specific wavelengths of light to passwhile reflecting other wavelengths, thereby allowing the image sensordevice 100 to determine the color of the light being received by thephotosensitive pixels 120. For example, the color filters 192 may be ared, green, and blue filter as used in a Bayer pattern. Othercombinations, such as cyan, yellow, and magenta, may also be used. Thenumber of different colors of the color filters 192 may also vary. Thecolor filters 192 may include a polymeric material or resin, such aspolymethyl-methacrylate (PMMA), polyglycidyl-methacrylate (PGMA), or thelike, that includes colored pigments.

An array of micro-lenses 195 is formed over the color filter layer 190.In some embodiments, the micro-lenses 195 are aligned with respectivecolor filters 192 and respective photosensitive pixels 120. Themicro-lenses 195 may be formed of any material that may be patterned andformed into lenses, such as a high transmittance acrylic polymer. Insome embodiments, a micro-lens layer may be formed using a material in aliquid state by, for example, spin-on techniques. Other methods, such asCVD, PVD, or the like, may also be used. The planar material for themicro-lens layer may be patterned using suitable photolithography andetching methods to pattern the planar material in an array correspondingto the array of the photosensitive pixels 120. The planar material maythen be reflowed to form an appropriate curved surface for themicro-lenses 195. Subsequently, the micro-lenses 195 may be cured using,for example, a UV treatment. In some embodiments, after forming themicro-lenses 195, the carrier substrate 200 (see FIG. 8 ) may bede-bonded form the image sensor device 100 and the image sensor device100 may undergo further processing such as, for example, packaging.

In FIGS. 9A and 9B, the image sensor device 100 includes thephotosensitive pixels 120, the deep-trench isolation structures 1601,and the light blocking structure 172. The deep-trench isolationstructures 1601 surrounds the photosensitive pixels 120 to isolate thephotosensitive pixels 120 from each other. The light blocking structure172 is above the deep-trench isolation structures 1601 to preventcross-talk which may occur when light from one pixel region makes itsway into an adjacent pixel region through the dielectric layer 160.

Reference is made to FIGS. 9A-9C, where FIG. 9C is an enlarged view ofarea P in FIG. 9A. Specifically, the light blocking structure 172includes a top portion 210 and a bottom portion 220. The top portion 210is above a topmost surface 164 t of the buffer layer 164, and the bottomportion 220 is embedded in (or surrounded by) the buffer layer 164. Thatis, a top surface 172 t of the light blocking structure 172 is higherthan the topmost surface 164 t of the buffer layer 164. A width W1 ofthe top portion 210 is greater than a width W2 of the bottom portion220. That is, the top portion 210 is wider than the bottom portion 220of the light blocking structure 172. Further, the deep-trench isolationstructures 1601 have a maximum width W3 smaller than the width W1 of thetop portion 210 and greater than the width W2 of the bottom portion 220of the light blocking structure 172.

In some embodiments, a bottom surface 222 of the bottom portion 220 ofthe light blocking structure 172 is lower than a top surface (i.e., theback surface 110B) of the substrate 110. That is, the depth D2 of thebottom portion 220 of the light blocking structure 172 is greater than athickness T1 of a portion of the buffer layer 164 outside the trench 165(i.e., a portion of the buffer layer 164 directly above thephotosensitive pixels 120).

The barrier/adhesion layer 175 is between the bottom portion 220 of thelight blocking structure 172 and the buffer layer 164. A first portion175 a (see FIG. 9A) of the barrier/adhesion layer 175 is directly abovethe photosensitive region 121, and a second portion 175 b (see FIG. 9A)of the barrier/adhesion layer 175 is embedded in the buffer layer 164.However, the barrier/adhesion layer 175 is separated from the chargeaccumulation layer 162 by the buffer layer 164. In some embodiments, alateral distance D1 between the charge accumulation layer 162 and abottom of the bottom portion 220 of the light blocking structure 172 isin a range of about 50 nm to about 500 nm. If the lateral distance D1 isgreater than about 500 nm, then the bottom portion 220 of the lightblocking structure 172 may not effectively prevent the opticallycross-talk among the photosensitive pixels 120. If the lateral distanceD1 is less than about 50 nm, then the light blocking structure 172 maybe in contact with the photosensitive pixels 120, which may causeelectrical cross-talk among the photosensitive pixels 120. In someembodiments, a bottommost surface 175 c of the barrier/adhesion layer175 is lower than the top surface 110B of the substrate 110.

Reference is made to FIG. 9A. The image sensor device 100 furtherincludes the dielectric layer 180 above the light blocking structure172. In some embodiments, the dielectric layer 180 is in contact withthe top portion 210 of the light blocking structure 172 and thebarrier/adhesion layer 175. The dielectric layer 180 is spaced apartfrom the bottom portion 220 of the light blocking structure 172. Thedielectric layer 180 may be a single layer or multiple layer, dependingon different requirements. The image sensor device 100 further includesthe color filter layer 190 including color filters 192 aligned withrespective photosensitive pixels 120. The image sensor device 100further includes the micro-lenses 195 respectively above the colorfilters 192. It is noted that the arrangement of the dielectric layer180, the color filters 192, and the micro-lenses 195 in FIG. 9A isillustrative, and should not limit the present disclosure. In someembodiments, the dielectric layer 180 is omitted, and the color filters192 are respectively formed in the openings 171 (see FIG. 7 ).

FIG. 10A is a cross-sectional view of an image sensor device 100′ inaccordance with some embodiments of the present disclosure, and FIG. 10Bis an enlarged view of area P′ in FIG. 10A. The difference between theimage sensor device 100′ in FIGS. 10A and 10B and the image sensordevice 100 in FIGS. 9A-9C pertains to the depth of the bottom portion220 of the light blocking structure 172. In FIGS. 10A-10B, the bottomsurface 222 of the bottom portion 220 of the light blocking structure172 (or the bottommost surface 175 c of the barrier/adhesion layer 175)is substantially level with the top surface 110B of the substrate 110.That is, the depth D2′ of the bottom portion 220 of the light blockingstructure 172 is substantially the same as or slightly greater than thethickness T1 of a portion of the buffer layer 164 outside the trench 165(i.e., a portion of the buffer layer 164 directly above thephotosensitive pixels 120). In some embodiments, a lateral distance D1′between the charge accumulation layer 162 and a bottom of the bottomportion 220 of the light blocking structure 172 is in a range of about30 nm to about 200 nm. If the lateral distance D1′ is greater than about200 nm, then the bottom portion 220 of the light blocking structure 172may not effectively prevent the optically cross-talk among thephotosensitive pixels 120. If the lateral distance D1′ is less thanabout 30 nm, then the light blocking structure 172 may in contact withthe photosensitive pixels 120, which may cause electrical cross-talkamong the photosensitive pixels 120. Other relevant structural detailsof the image sensor device 100′ in FIGS. 10A-10B are substantially thesame as or similar to the image sensor device 100 in FIGS. 9A-9C, and,therefore, a description in this regard will not be repeatedhereinafter.

FIG. 11A is a cross-sectional view of an image sensor device 100″ inaccordance with some embodiments of the present disclosure, and FIG. 11Bis an enlarged view of area P″ in FIG. 11A. The difference between theimage sensor device 100″ in FIGS. 11A-11B and the image sensor device100 in FIGS. 9A-9C pertains to the depth of the bottom portion 220 ofthe light blocking structure 172. In FIGS. 11A-11B, the bottom surface222 of the bottom portion 220 of the light blocking structure 172 (or abottommost surface 175 c of the barrier/adhesion layer 175) is higherthan the top surface 110B of the substrate 110. That is, the depth D2″of the bottom portion 220 of the light blocking structure 172 is smallerthan the thickness T1 of a portion of the buffer layer 164 outside thetrench 165 (i.e., a portion of the buffer layer 164 directly above thephotosensitive pixels 120). For example, a difference between thethickness T1 and the depth D2″ is greater than about 50 nm and less thanthe thickness T1. Other relevant structural details of the image sensordevice 100″ in FIGS. 11A-11B are substantially the same as or similar tothe image sensor device 100 in FIGS. 9A-9C, and, therefore, adescription in this regard will not be repeated hereinafter.

FIG. 12 is a flow chart of a method M for forming an image sensor devicein accordance with some embodiments of the present disclosure. Althoughthe method M is illustrated and/or described as a series of acts orevents, it will be appreciated that the method is not limited to theillustrated ordering or acts. Thus, in some embodiments, the acts may becarried out in different orders than illustrated, and/or may be carriedout concurrently. Further, in some embodiments, the illustrated acts orevents may be subdivided into multiple acts or events, which may becarried out at separate times or concurrently with other acts orsub-acts. In some embodiments, some illustrated acts or events may beomitted, and other un-illustrated acts or events may be included.

At block S12, a photosensitive pixel is formed in a substrate from afront surface of the substrate. FIG. 1 illustrates a cross-sectionalview of some embodiments corresponding to act in block S12. At blockS14, a first trench is formed in the substrate from a back surface ofthe substrate, wherein the first trench surrounds the photosensitivepixel. FIG. 3 illustrates a cross-sectional view of some embodimentscorresponding to act in block S14. At block S16, a buffer layer isformed on the substrate and in the first trench. In some embodiments, aportion of the buffer layer in the first trench is referred to as adeep-trench isolation structure. FIG. 4 illustrates a cross-sectionalview of some embodiments corresponding to act in block S16. At blockS18, a second trench is formed in the buffer layer and above thedeep-trench isolation structure. FIG. 5 illustrates a cross-sectionalview of some embodiments corresponding to act in block S18. At blockS20, a light blocking structure is formed above the buffer layer and inthe second trench. FIGS. 6-7 illustrate cross-sectional views of someembodiments corresponding to act in block S20. At block S22, a colorfilter layer is formed above the light blocking structure. At block S24,micro-lenses are formed above the color filter layer. FIGS. 9A-9Cillustrates a cross-sectional view of some embodiments corresponding toact in blocks S22 and S24.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages. It is understood, however, that otherembodiments may offer additional advantages, and not all advantages arenecessarily disclosed herein, and that no particular advantage isrequired for all embodiments. One advantage is that the bottom portionof the light blocking structure further prevents the optical cross-talkamong photosensitive pixels through the buffer layer. Another advantageis that since the bottom portion of the light blocking structure isformed above the isolation structure, the trench formations for thebottom portion of the light blocking structure and the isolationstructure may use the same mask.

According to some embodiments, an image sensor device includes asubstrate, a deep-trench isolation structure, a buffer layer, and alight blocking structure. The substrate has a photosensitive region. Thedeep-trench isolation structure is in the substrate and adjacent thephotosensitive region. The buffer layer is over the photosensitiveregion and the deep-trench isolation structure. The light blockingstructure is over the buffer layer. A bottom portion of the lightblocking structure is embedded in the buffer layer.

According to some embodiments, an image sensor device includes asubstrate, a buffer layer, a light blocking structure, and an adhesionlayer. The substrate has a photosensitive region. The buffer layer isabove the substrate. The light blocking structure is above the bufferlayer. The adhesion layer is between the light blocking structure andthe buffer layer. A first portion of the adhesion layer is directlyabove the photosensitive region, and a second portion of the adhesionlayer is embedded in the buffer layer.

According to some embodiments, a method for manufacturing an imagesensor device includes forming a photosensitive pixel in a substrate. Afirst trench is formed in the substrate to surround the photosensitivepixel. A buffer layer is formed on the substrate and in the first trenchto form a deep-trench isolation structure in the first trench. A secondtrench is formed in the buffer layer and above the deep-trench isolationstructure. A light blocking structure is formed above the buffer layerand partially in the second trench.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An image sensor device comprising: a substratehaving a photosensitive region; a deep-trench isolation structure in thesubstrate and adjacent the photosensitive region; an oxide layer overthe photosensitive region and the deep-trench isolation structure; alight blocking structure over the oxide layer, wherein a bottom portionof the light blocking structure is embedded in the oxide layer; and anadhesion layer between the light blocking structure and the oxide layer,wherein the adhesion layer extends beyond a sidewall of a top portion ofthe light blocking structure.
 2. The image sensor device of claim 1,wherein a top surface of the light blocking structure is higher than atop surface of the oxide layer.
 3. The image sensor device of claim 1,wherein a bottom surface of the bottom portion of the light blockingstructure is lower than a top surface of the substrate.
 4. The imagesensor device of claim 1, wherein a bottom surface of the bottom portionof the light blocking structure is substantially level with a topsurface of the substrate.
 5. The image sensor device of claim 1, whereina bottom surface of the bottom portion of the light blocking structureis higher than a top surface of the substrate.
 6. The image sensordevice of claim 1, wherein the light blocking structure furthercomprises a top portion above the bottom portion.
 7. The image sensordevice of claim 6, wherein a width of the top portion of the lightblocking structure is greater than a width of the bottom portion of thelight blocking structure.
 8. The image sensor device of claim 6, whereina width of the top portion of the light blocking structure is greaterthan a width of the deep-trench isolation structure.
 9. The image sensordevice of claim 1, further comprising a dielectric layer covers thelight blocking structure.
 10. The image sensor device of claim 9,wherein the dielectric layer is spaced apart from the bottom portion ofthe light blocking structure.
 11. An image sensor device comprising: asubstrate having a photosensitive region; an oxide layer above thesubstrate; a light blocking structure above the oxide layer; and anadhesion layer between the light blocking structure and the oxide layer,wherein a first portion of the adhesion layer is directly above thephotosensitive region and not covered by the light blocking structure,and a second portion of the adhesion layer is embedded in the oxidelayer.
 12. The image sensor device of claim 11, wherein a bottommostsurface of the adhesion layer is lower than a top surface of thesubstrate.
 13. The image sensor device of claim 11, wherein a bottommostsurface of the adhesion layer is substantially level with a top surfaceof the substrate.
 14. The image sensor device of claim 11, wherein abottommost surface of the adhesion layer is higher than a top surface ofthe substrate.
 15. An image sensor device comprising: a substrate havinga first surface and a second surface opposite to the first surface,wherein the substrate further has a photosensitive region closer to thefirst surface than to the second surface; a first light blockingstructure and a second light blocking structure over the substrate andon opposite sides of the photosensitive region, wherein a bottommostsurface of the first light blocking structure is lower than the secondsurface of the substrate; an adhesion layer below the first lightblocking structure and the second light blocking structure, wherein theadhesion layer comprises: a first portion in contact with the bottommostsurface of the first light blocking structure; a second portion incontact with a bottommost surface of the second light blockingstructure; and a third portion interconnecting the first portion and thesecond portion of the adhesion layer.
 16. The image sensor device ofclaim 15, further comprising a high-k dielectric layer between theadhesion layer and the substrate, wherein a portion of the high-kdielectric layer is directly between the third portion of the adhesionlayer and the photosensitive region.
 17. The image sensor device ofclaim 16, further comprising an oxide layer between the adhesion layerand the high-k dielectric layer.
 18. The image sensor device of claim17, wherein a bottommost surface of the oxide layer is lower than atopmost surface of the photosensitive region.
 19. The image sensordevice of claim 15, wherein a top surface of the third portion of theadhesion layer is higher than the second surface of the substrate. 20.The image sensor device of claim 15, further comprising a color filterover the first light blocking structure and the second light blockingstructure, wherein the third portion of the adhesion layer is directlybetween the color filter and the photosensitive region.